판매용 중고 JEOL JBX-5500FS #9131532
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판매
ID: 9131532
웨이퍼 크기: 4"
빈티지: 2010
Direct Write E-beam Lithography System, 4"
Specifications:
General:
Electron-beam lithography system that employs spot-beam vector scanning for sub-micron and nano-lithography
Two selectable writing modes:
High-resolution writing mode (5th Lens mode) for nano-lithography
High-speed writing mode (4th Lens mode) for sub-micron lithography
Accelerating voltage is also selectable either 25kV or 50kV
Beam scanning speed: 12MHz
Stage position is controlled by high-precision laser interferometer
Control system: Microsoft® Windows® PC
Minimum feature size:
High-resolution writing mode 50Kv: </= 10 nm (at the field center)
Overlay accuracy:
High-resolution writing mode 50kV:</= 40 nm (3 sigma)
High-speed writing mode 25kV (1200 um Field): </= 70 nm (3 sigma)
Field stitching accuracy:
High-resolution writing mode 50kV: </= 40 nm (3 sigma)
High-speed writing mode 25kV (1200 um Field): </= 70 nm (3 sigma)
Performance:
Electron beam:
Beam shape: Spot (Gaussian) beam
Accelerating voltage: 50 kV, 25 kV
Beam current: 30 pA to 20 nA
Beam deflection method: Vector scan (Random access)
Writing field:
High-resolution writing mode:
50kV: Up to 100 um X 100 um
25kV: Up to 200 um 200 um
High-speed writing mode:
50kV: Up to 1000 um
25kV: Up to 2000 um
Beam positioning DAC: (18) bits
Beam-positioning unit:
High-resolution writing mode:
50kV: 0.5 nm
25kV: 1 nm
High-speed writing mode:
50kV: 5 nm
25kV: 10 nm
Beam scanning DAC: (12) bits
High-resolution writing mode:
50kV: 0.5 nm x N
25kV: 1 nm x N
High-speed writing mode:
50kV: 5 nm x N
25kV: 10 nm x N
Beam scanning speed: 83.3 ns to 4 ms/scanning step size (12 MHz to 250 Hz, respectively)
Field correction function:
Deflection correction: Amplitude, Rotation
Deflection aberration correction: Deflection distortion
Stage movement:
Method: Step and Repeat
Stage position measurement: Laser interferometer
Positional step size: lambda/1024 (approx. 0.6 nm)
Stage movement range: 104 x 75 mm
Writing area: 75 x 75 mm
Moving speed: Up to 10 mm/s
Material Transfer:
Loader
Manual loader: Single cassette loading mechanism
Cassette (Substrate Holder)
Wafer size: 2 to 4 inch
Wafer loading/unloading: Manual
Input pattern data:
Data format: JEOL52(V3.0)
Writing field:
High-resolution writing mode:
50kV: Up to 100 um x 100 um
25kV: Up to 200 um x 200 um
High-speed writing mode:
50kV: Up to 1000 um x 1000 um
25kV: Up to 2000 um x 2000 um
Specified resolution:
High-resolution writing mode:
50kV: 0.5 nm
25kV: 1 nm
High-speed writing mode:
50kV: 5 nm
25kV: 10 nm
Writing functions:
Cyclic correction: Dose correction, Beam position correction, Beam deflection system correction
Shot time modulation: Up to 256 ranks
Field shift overlapping writing
Design Functions:
Data format: JEOL01
Data conversion output: JEOL52(V3.0)
Draw-able figure: Rectangle, Circle, Polygon, Line, Ring
Editing: Flip, Rotation, Copy & Paste, Duplicate, Grouping
Utility: Reticular, Radial, Fresnel ring generator
Figure map display: Display whole and partial drawing
Others: JEOL52(V3.0) display
Configration:
Component Systems
Electron beam column
Electron source: ZrO/W emitter (Thermal field emission source)
Electron beam optics:
Beam alignment coil
Beam blanker
Lens (de-magnifying, illumination)
Objective lens (4th Lens, 5th Lens)
Beam deflector (1st Deflector, 2nd Deflector)
Stigmator: Objective aperture (4 holes)
Electron beam detection: Back-scattered electron detector, Secondary electron detector, Absorbed current
detector
Material-driving system: XY stage, Laser interferometer system
Material transfer: Manual loader (one cassette can be loaded)
Control CPU system
Personal computer: HP series
Workstation: SUN series
Board CPU
Evacuation system: Vacuum pumps, Valves
Frame
Anti-vibration: Mount
Software
Operating system
Personal computer: Windows XP
Workstation: Solaris 10
Writing preparation: Pattern design GUI
System control: Main GUI, System calibration GUI, Writing GUI
Installation requirements:
Power Supply
Voltage and Capacity:
Single-phase, 100 V, 4 kVA: (2) Lines
Single-phase, 200 V, 8 kVA: (1) Line
Three-phase, 200 V, 4.8 kVA: (1) Line
Power supply frequency tolerance
50 Hz regions: 47 Hz to 53 Hz
60 Hz regions: 57 Hz to 63 Hz
Voltage variation tolerance
For 1 cycle or more: -5% to +10 %
For less than 1 cycle
Sag (voltage sink): </= 10 %
Surge (voltage rise): </= 10 %
Notch: </= 200 V
Spike: </= 200 V
Grounding (forbidden to be used with other instruments)
Ground wire (for exclusive use): 100 0hm or less (D class)
For 0.15 MHz to 0.5 MHz: </= 79 dBuV (quasi peak value); </= 66 dBuV
For 0.5 MHz to 30 MHz: </= 73 dBuV (quasi peak value); </= 60 dBuV
For less than 0.15 MHz, compatible with the level at 0.15 MHz
Primary Cooling Water
Flow rate: 6 L/min (at 25 C) or 13 L/min (at 32 C)
Supply pressure: 0.15 to 0.5 MPa gauge pressure at maximum
Temperature: 15 to 32C
Connection form: Braided hose (inside diameter 15 mm, outside diameter 22 mm)
Overflow drain: No backing pressure
pH (at 25 C): 6.0 to 8.0
Electrical conductivity (mS/m) (at 25 C): </= 30
Chloride ion (mg Cl–/L): </= 50
Sulfate ion (mg SO42–/L): </= 50
Total hardness (mg CaCO3/L): </= 70
Calcium hardness (mg CaCO3/L): </= 50
Ionic silica (mg SiO2/L): </=30
Iron (mg Fe/L): </= 0.3
Sulfide ion: Not detected
Ammonium ion (mg NH4+/L): </= 0.1
High-pressure gas
Material: Nitrogen gas or Clean Dry Air
Supply pressure: 0.5 MPa
Maximum flow rate: 50 L/min
Connection form: 6 mm in diameter
Low-pressure Gas
Material: Nitrogen gas
Supply pressure: 0.1 MPa
Maximum flow rate: 50 L/min
Temperature: 21 to 25 C
Cleanliness: ISO Class 3
Purity: 99.999% or more
Connection form: 1/4 inch in diameter
Evacuate: For roughing vacuum pump
Evacuating capacity: 500 L/min at 50 Hz, 600 L/min at 60 Hz
Pressure: No backing pressure
Connection form: NW25
Installation Space: 5.5 (W)x 3.5 (D)x 2.7 (H) m or more
Entrance: 2.0 (W) x 2.1 (H) m or more
Room Temperature: 21 to 25C
Stability: Within +/- 0.2C/h (Main console area); Within 1C/h Other units area
Humidity: 60% or less (non condensing)
Airflow: about 0.3 m/s
Stray magnetic field
Commercial frequency: (BX2+BY2+BZ2)1/2 </= 0.1 uT
Drift component: (BX2+BY2+BZ2)1/2 </- 0.1 uT
Floor Flatness: +/-1 mm within 600 x 600 mm area
Sound Noise Level
20 Hz-12500 Hz: </= 65 dB
20 Hz and under: </= 90 dB
2010 vintage.
JEOL JBX-5500FS는 고속, 고속 처리량 이미징을 위해 설계된 스캔 전자 현미경 (SEM) 입니다. 2 차 및 백스캐터링 된 전자 이미징, cathodoluminescence 및 PMT (photomultiplier tube) 이미징을 포함한 다양한 이미징 모드에서 고해상도 이미지를 캡처 할 수 있습니다. JBX-5500FS에는 고속 (fast electron) 광 열이 장착되어 있어 10 초 이내에 이미지를 얻을 수 있습니다. JEOL JBX-5500FS는 필드 방출 총을 특징으로하는 열적 SEM 열을 사용하며, 비 전도성 샘플의 고대비 이미징을 위해 5kV 저 진공 모드를 제공합니다. 이를 통해 최대 300,000 배의 높은 배율에서도 이미지 품질이 향상된 나노 스케일 (nanoscale) 기능을 감지 할 수 있습니다. JBX-5500FS는 정밀도가 높은 XY 모터 스테이지 (Motorized Stage) 를 가지고 있으며, 최고 속도 (5,000m/s) 로 움직일 수 있어 뛰어난 이미징 성능을 제공합니다. 현미경은 또한 자동화되고 완전히 프로그래밍 가능한 Close Zone Imaging 미니 스테이지를 특징으로하며, 스팟 온 반복 성과 서브 미크론 정확성을 제공합니다. JEOL JBX-5500FS는 인체 공학적 설계를 갖추고 있으며 이미지를 쉽게 작동하고 볼 수 있도록 21 인치 TFT 모니터를 갖추고 있습니다. 또한 형태, 크기, 분포를 측정하기위한 입자 분석 제품군 (Particle Analysis Suite) 과 광학 이미지를 사용하여 피쳐를 측정하는 도구 (Tools) 를 포함하여 다양한 도구를 갖춘 통합 이미지 인식 및 분석 소프트웨어 패키지가 있습니다. JBX-5500FS 는 에너지 필터링 기능이 우수하여, 최적의 이미징을 위해 저에너지 전자와 고에너지 전자를 필터링할 수 있습니다. 향상된 명암과 해상도를 위해 필터 및 검출기를 조정할 수 있습니다. 요약하면, JEOL JBX-5500FS는 뛰어난 이미징 및 이미징 처리 능력을 갖춘 고성능 스캐닝 전자 현미경입니다. 뛰어난 이미지 품질과 명암비를 통해 빠르고 정확한 이미징 성능을 제공하는 고출력 이미징 (HRT) 기능을 제공합니다.
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