판매용 중고 VARIAN VIISta 3000HP #9210718

Ion implanter, 8" Main circuit breaker: 225 AMP Maximum beam energy: 3,750 KeV Exhaust flow rate: 21~24 m³/min PCW: Input: 60~ 100 PSIG 60~ 100 PSIG Flow rate: 20 GPM Input temperature: 16~19°C Pressure: N2: 55~100 PSIG Ar: 50~100 PSIG Air: 90~100 PSIG Implant dose accuracy: Dose range: 5E10 to 1E16 ions/cm² Uniformity: 1s < 0.5% Repeatability: 1s < 0.5% (Wafer-to-wafer, cassette-to-cassette) Beam parallelism: < 0.5° in X & Y Axis Ion mass resolution: M//DM > 80 Throughput: 250 wph Wafer breakage: 1:100000 Process angles wafer tilt: -60° to +60° Programmable in 1° steps Accuracy: ±0.5° -25° to +60° (Roplat) Pumping line: Under roof Source head type: Bernas Wafer orientation: 0° to 360° (Programmable in 1° steps, accuracy ±2°) Recipe-controlled stepped wafer rotation Particulate control: Front side: < 0.15 particles added/cm² at > 0.16mm particles Vacuum pump: Turbo pump: STP1003 Cryo pump 1: 250F Cryo pump 2,3,4: 400 GAS Box: Ar High pressure / Internal AsH3 Cylinder type: SDS PH3 Cylinder type: SDS BF3 Cylinder type: SDS Gas line purge End station module: Wafer handler platform type: Standard Tilter type: Standard Faraday type: Standard Enclosure: Signal tower Smoke detectors Vacuum system: Source: Turbo pump type: STP1003 Rough pump type: KASHIYAMA SDE 90 Beam line: Analyzer turbo pump type: STP1003 Beamline turbo pump type: STP1003 Beam roughing pump type: KASHIYAMA SDE 90 Chamber: Chamber hi-vac pump: Cryo pump Cryo pump type: CTI 400 Cryo compressor type: CTI 9600 Loadlock Hi-vac pump: CTI400 Loadlock roughing pump: KASHIYAMA SDE 90 Includes manuals & drawing books Power: 208 V, 50/60 Hz, 3 Phase, 60 A, 4/5W 2005 vintage.