판매용 중고 ASYNTIS Silicon Star 8 #9114174

Stress relief system for plasma etching, 8" Process data: Etch rate: up to 3 µm/min at process temperatures less than 70°C Throughput: 40 wafers/hour at 3 µm removal Process chamber: Inner diameter: 400 mm Chamber volume: 40 L Radical source on chamber top (remote plasma) Vacuum outlet with solenoid valve DN 63 ISO-K on bottom Automatic drawer door Viewing window Chamber leak rate: less than 5 Pa L/sec Radical generator: Water-cooled microwave radical generator Maximum power consumption: 2 kW Frequency: 2.45 GHz Water-cooled magnetron Gas supply: (3) Gas channels with solenoid valves and MFC's Stainless steel piping with 6 mm SWAGELOK fittings Down stream controller: butterfly valve DN 63 ISO-K Chuck system: Top plate for 8" wafers Water-cooled base Chamber controller: PLC controller and LCD display Multiple process programs Online viewing of process parameters Status and error messages Vacuum measurements: Capacitive vacuum gauge: gas type independent Measuring range: 1 to 1,000 Pa Main control unit: SIEMENS Simatic S7 Graphical user interface Online control of all parameters Robot system: 3-axis robot with servo drives Safety precautions: Emergency stop switch HF and UV absorbing view port Safety interlock system CE assembly and wiring regulations compliant (2) Cassette loaders (6) THERMO ELECTRON / HAAKE chillers: TC100 / TC300 (2) BUSCH Cobra DS 80 hivac pumps Facilities requirements: Cooling water for plasma source: 1/4" brass, 3L/min, 26°C, 0.5 to 1 bar Cooling water for chuck system: 1/4" brass, 5 L/min, 5 to 40°C, power: 2kW Process gas: 6 mm SWAGELOK, stainless steel, input: 2 bar Compressed air: 12 mm SWAGELOK, stainless steel, input: 4 to 6 bar Nitrogen purge: 12 mm SWAGELOK, input: 2 bar Currently in storage 230/400 VAC, 50/60Hz, 3-phase, 63A 2005 vintage.